منابع مشابه
Dislocations at the interface between sapphire and GaN
GaN layers grown by metal organic vapour phase epitaxy on sapphire were imaged by synchrotron radiation X-ray topography. The threading dislocations could not be resolved in the topographs due to their high density, but a smaller density of about 105 cm-2 misfit dislocations were seen in the interface between GaN and sapphire by using large-area backreflection topography. The misfit dislocation...
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انتخاب نامساعد یکی از مشکلات اساسی در صنعت بیمه است. که ابتدا در سال 1960، توسط روتشیلد واستیگلیتز مورد بحث ومطالعه قرار گرفت ازآن موقع تاکنون بسیاری از پژوهشگران مدل های مختلفی را برای تجزیه و تحلیل تقاضا برای صنعت بیمه عمر که تماما ناشی از عدم قطعیت در این صنعت میباشد انجام داده اند .وهدف از آن پیدا کردن شرایطی است که تحت آن شرایط انتخاب یا کنار گذاشتن یک بیمه گزار به نفع و یا زیان شرکت بیمه ...
15 صفحه اولDislocation Arrangement in a Thick LEO GaN Film on Sapphire
Diffraction-contrast TEM, focused probe electron diffraction, and high-resolution X-ray diffraction were used to characterize the dislocation arrangements in a 16μm thick coalesced GaN film grown by MOVPE LEO. As is commonly observed, the threading dislocations that are duplicated from the template above the window bend toward (0001). At the coalescence plane they bend back to lie along [0001] ...
متن کاملMetastable Giant Moments in Gd-Implanted GaN, Si, and Sapphire
We report on Gd ion implantation and magnetic characterization of GaN films on sapphire substrates and of bare sapphire and Si substrates to shed light on the mechanism underlying the induced magnetism upon Gd ion implantation. For all three hosts, giant magnetic moments per Gd ion were observed at temperatures of 5 through 300 K. The maximum moment per Gd in GaN was 1800μB , while the moments ...
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ژورنال
عنوان ژورنال: III-Vs Review
سال: 2002
ISSN: 0961-1290
DOI: 10.1016/s0961-1290(02)85197-3